Reduction of molybdenum resistivity by a seed layer of Ti-W

Sami Franssila; H. Kattelus; E. Nykänen

Reduction of molybdenum resistivity by a seed layer of Ti-W

Sami Franssila
, H. Kattelus
, E. Nykänen

School of Electrical Engineering

Research output: Contribution to journal › Article › Scientific › peer-review

8 Citations (Scopus)

Original language	English
Pages (from-to)	373-380
Journal	Microelectronic Engineering
Volume	37/38
Publication status	Published - 1997
MoE publication type	A1 Journal article-refereed

Keywords

molybdenum
resistivity
sputtering
thin film
Ti-W layer

Cite this

@article{27253ef93611435eb8e623a023ce849d,

title = "Reduction of molybdenum resistivity by a seed layer of Ti-W",

keywords = "molybdenum, resistivity, sputtering, thin film, Ti-W layer, molybdenum, resistivity, sputtering, thin film, Ti-W layer, molybdenum, resistivity, sputtering, thin film, Ti-W layer",

author = "Sami Franssila and H. Kattelus and E. Nyk{\"a}nen",

year = "1997",

language = "English",

volume = "37/38",

pages = "373--380",

journal = "Microelectronic Engineering",

issn = "1873-5568",

publisher = "Elsevier",

}

TY - JOUR

T1 - Reduction of molybdenum resistivity by a seed layer of Ti-W

AU - Franssila, Sami

AU - Kattelus, H.

AU - Nykänen, E.

PY - 1997

Y1 - 1997

KW - molybdenum

KW - resistivity

KW - sputtering

KW - thin film

KW - Ti-W layer

KW - molybdenum

KW - resistivity

KW - sputtering

KW - thin film

KW - Ti-W layer

KW - molybdenum

KW - resistivity

KW - sputtering

KW - thin film

KW - Ti-W layer

M3 - Article

SN - 1873-5568

VL - 37/38

SP - 373

EP - 380

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -