Reduction of internal stress in sputter-deposited films by energetic ion bombardment

R. Nowak, Y. Horino, Y. Ando, S. Maruno

Research output: Contribution to journalArticleScientificpeer-review


Considerable relaxation of the high internal stresses which arise in HfN thin films during their deposition by a sputtering method has been accomplished through bombarding the films with energetic silicon ions. The internal stresses have been estimated from the measurements of the surface curvature. Our results indicate a relaxation of the internal compressive stresses in the films, which occurs via a transport of the interstitial defects within the thermal spikes created by a post-deposition energetic ion bombardment. The mechanical properties of HfN films before and after the treatment have been studied by depth-sensing indentation technique while the structural analysis has been made using x-ray diffraction, Rutherford backscattering, and Anger electron spectroscopy. Ion bombardment did not affect resistivity of the thin films while improving their plastic properties. (C) 1996 American Institute of Physics.

Original languageEnglish
Pages (from-to)3743-3745
Number of pages3
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed



Cite this