Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

Research output: Contribution to journalArticle


Research units

  • Uppsala University
  • Linköping University


The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. © 2009 Elsevier B.V. All rights reserved.


Original languageEnglish
Pages (from-to)4925-4928
Number of pages4
JournalPhysica B: Condensed Matter
Issue number23-24
Publication statusPublished - 15 Dec 2009
MoE publication typeA1 Journal article-refereed

    Research areas

  • Defects, High-energy ion irradiation, InGaN, Ion beam analysis, Optoelectronic devices, Photoluminescence

ID: 3436632