Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

Muhammad Ali; Olli Svensk; Zhu Zhen; Sami Suihkonen; Pekka Törmä; Harri Lipsanen; Markku Sopanen; K. Hjort; J. Jensen

doi:10.1016/j.physb.2009.08.233

Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

Muhammad Ali^*, Olli Svensk, Zhu Zhen, Sami Suihkonen, Pekka Törmä, Harri Lipsanen, Markku Sopanen, K. Hjort, J. Jensen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

Abstract

The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 10¹¹ ions/cm². It is observed that even the ion fluences in the 10⁹ ions/cm² range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. © 2009 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	4925-4928
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	404
Issue number	23-24
DOIs	https://doi.org/10.1016/j.physb.2009.08.233
Publication status	Published - 15 Dec 2009
MoE publication type	A1 Journal article-refereed

Keywords

Defects
High-energy ion irradiation
InGaN
Ion beam analysis
Optoelectronic devices
Photoluminescence

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title = "Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation",

abstract = "The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. {\textcopyright} 2009 Elsevier B.V. All rights reserved.",

keywords = "Defects, High-energy ion irradiation, InGaN, Ion beam analysis, Optoelectronic devices, Photoluminescence",

author = "Muhammad Ali and Olli Svensk and Zhu Zhen and Sami Suihkonen and Pekka T{\"o}rm{\"a} and Harri Lipsanen and Markku Sopanen and K. Hjort and J. Jensen",

year = "2009",

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doi = "10.1016/j.physb.2009.08.233",

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T1 - Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

AU - Ali, Muhammad

AU - Svensk, Olli

AU - Zhen, Zhu

AU - Suihkonen, Sami

AU - Törmä, Pekka

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Hjort, K.

AU - Jensen, J.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. © 2009 Elsevier B.V. All rights reserved.

AB - The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. © 2009 Elsevier B.V. All rights reserved.

KW - Defects

KW - High-energy ion irradiation

KW - InGaN

KW - Ion beam analysis

KW - Optoelectronic devices

KW - Photoluminescence

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DO - 10.1016/j.physb.2009.08.233

M3 - Article

VL - 404

SP - 4925

EP - 4928

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 23-24

ER -

Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

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Keywords

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