Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40 Mev iodine ion irradiation

Muhammad Ali*, Olli Svensk, Zhu Zhen, Sami Suihkonen, Pekka Törmä, Harri Lipsanen, Markku Sopanen, K. Hjort, J. Jensen

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    The effects following ion irradiation of GaN-based devices are still limited. Here we present data on the photoluminescence (PL) emitted from InGaN/GaN multiple quantum well (MQW) structures, which have been exposed to 40 MeV I ion irradiation. The PL is reduced as a function of applied ion fluence, with essentially no PL signal left above 1011 ions/cm2. It is observed that even the ion fluences in the 109 ions/cm2 range have a pronounced effect on the photoluminescence properties of the MQW structures. This may have consequences concerning application of InGaN/GaN MQW's in radiation-rich environments, in addition to defect build-up during ion beam analysis. © 2009 Elsevier B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)4925-4928
    Number of pages4
    JournalPhysica B: Condensed Matter
    Volume404
    Issue number23-24
    DOIs
    Publication statusPublished - 15 Dec 2009
    MoE publication typeA1 Journal article-refereed

    Keywords

    • Defects
    • High-energy ion irradiation
    • InGaN
    • Ion beam analysis
    • Optoelectronic devices
    • Photoluminescence

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