Red luminescence from strain-induced GaInP quantum dots

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • VTT Technical Research Centre of Finland

Abstract

The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaInP quantum wells. To obtain quantum dot luminescence in a widely tunable wavelength range of 630–700 nm, the composition and thickness of the GaInP quantum well is varied. The effect of different cap layer materials, i.e., GaAs, AlGaAs, GaInP, and AlGaInP on the InP island formation and quantum dot luminescence properties is investigated. The luminescence intensity ratio of the quantum dot peak to the quantum well peak is found to be highest when a GaAs cap is used.

Details

Original languageEnglish
Pages (from-to)3393-3395
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number22
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

    Research areas

  • optoelectronics, semiconductors

ID: 4951402