Recombination processes in strain-induced InGaAs quantum dots

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • University of Marburg
  • VTT Technical Research Centre of Finland

Abstract

We have performed time-integrated and time-resolved photoluminescence experiments on high-quality stressor-induced InGaAs/GaAs quantum dots. The optical spectra of these dot structures exhibit large quantization effects together with remarkably low inhomogeneous broadenings of the respective excitonic transitions. Thus a detailed investigation of the relaxation and recombination dynamics within the distinct electronic dot states becomes feasible. We find that the initial relaxation of optically generated carriers down to the lowest dot states is very efficient. This fast thermalization is ascribed to Coulomb scattering between carriers confined in dot states and carriers located in the higher-energetic quantum well states.

Details

Original languageEnglish
Pages (from-to)1699-1703
Number of pages5
JournalNUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D: CONDENSED MATTER, ATOMIC, MOLECULAR AND CHEMICAL PHYSICS, BIOPHYSICS
Volume17
Issue number11-12
Publication statusPublished - Nov 1995
MoE publication typeA1 Journal article-refereed

    Research areas

  • Conference proceedings, Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds), III-V compounds and systems, Localized single-particle electronic states (including impurities), Photoluminescence, Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter

ID: 5546323