Recombination processes in strain-induced InGaAs quantum dots.

Research output: Working paper › Professional

Original language	English
Place of Publication	Cortona, Italy
Pages	s.
Publication status	Published - 1995
MoE publication type	D4 Published development or research report or study

Keywords

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title = "Recombination processes in strain-induced InGaAs quantum dots.",

keywords = "quantum dots, semiconductors, quantum dots, semiconductors, quantum dots, semiconductors",

author = "H. Lipsanen and J. Sandman and S. Grosse and J. Feldmann and E.O. Gobel and M. Sopanen and J. Ahopelto",

year = "1995",

language = "English",

pages = "s.",

type = "WorkingPaper",

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TY - UNPB

T1 - Recombination processes in strain-induced InGaAs quantum dots.

AU - Lipsanen, H.

AU - Sandman, J.

AU - Grosse, S.

AU - Feldmann, J.

AU - Gobel, E.O.

AU - Sopanen, M.

AU - Ahopelto, J.

PY - 1995

Y1 - 1995

KW - quantum dots, semiconductors

M3 - Working paper

SP - s.

BT - Recombination processes in strain-induced InGaAs quantum dots.

CY - Cortona, Italy

ER -