Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

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Original languageEnglish
Pages (from-to)327-331
JournalPHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Volume10
Issue number3
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

ID: 938047