Reactively sputtered Ta2N and TaN diffusion barriers for copper metallization

Jyrki Molarius*, Tomi Laurila, Tommi Riekkinen, Kejun Zeng, Antti Niskanen, Markku Leskelä, Ilkka Suni, Jorma K. Kivilahti

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


    The reaction mechanisms in the Si/TaNx/Cu metallization systems are discussed based on the experimental results and the assessed ternary Si-Ta-N and Ta-N-Cu phase diagrams. The 50 nm thick Ta2N barrier layer was observed to fail after anneal at 725 °C for 30 min due to the diffusion of Cu through the barrier layer and the resulting formation of Cu3Si precipitates. No tantalum silicide formation was observed. TaN barrier layers failed by the same mechanism without any tantalum silicide formation at 750 °C/30 min. Adhesion of Cu to the TaN layers was not as good as to Ta2N and some adhesion failures were observed. For comparison thinner (10nm) and thicker (100 nm) TaNx films were used as diffusion barriers between Cu and Si. Sheet resistance measurements, x-ray diffraction (XRD), and scanning electron microscopy (SEM) were used in studying these thin film reactions.

    Original languageEnglish
    Title of host publicationAdvanced Metallization Conference (AMC)
    EditorsD. Edelstein, G. Dixit, Y. Yasuda, T. Ohba
    Number of pages5
    Publication statusPublished - 2000
    MoE publication typeA4 Article in a conference publication
    EventAdvanced Metallization Conference - San Diego, United States
    Duration: 2 Oct 20004 Oct 2000


    ConferenceAdvanced Metallization Conference
    CountryUnited States
    CitySan Diego


    • copper
    • diffusion barriers
    • metallization
    • Ta2N
    • TaN

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