Reaction Mechanism Studies on ZrO2 Grown by ALD - A Comparison Between ZrCl4 and Cp2ZrMe2 Based Processes

A Rahtu, Jaakko Niinistö, Matti Putkonen, Lauri Niinistö, Mikko Ritala, Markku Leskelä

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationHelsinki
    Pages124
    Publication statusPublished - 2004
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameThe AVS Topical Conference on Atomic Layer Deposition (ALD 2004), Helsinki, Finland, August, 16-18, 2004
    PublisherAmerican vacuum society (AVS)

    Keywords

    • ALD
    • atomic layer deposition
    • reaction mechanism
    • ZrO2 thin films

    Cite this

    Rahtu, A., Niinistö, J., Putkonen, M., Niinistö, L., Ritala, M., & Leskelä, M. (2004). Reaction Mechanism Studies on ZrO2 Grown by ALD - A Comparison Between ZrCl4 and Cp2ZrMe2 Based Processes. (pp. 124). (The AVS Topical Conference on Atomic Layer Deposition (ALD 2004), Helsinki, Finland, August, 16-18, 2004).