Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation

Z. Xia; Jaakko Saarilahti; H. Ronkainen; S. Eränen; I. Suni; J. Molarius; P. Kuivalainen; E. Ristolainen; T. Tuomi

doi:10.1016/0168-583X(94)95320-1

Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation

Z. Xia
, Jaakko Saarilahti
, H. Ronkainen
, S. Eränen
, I. Suni
, J. Molarius
, P. Kuivalainen
, E. Ristolainen
, T. Tuomi

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	247-254
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	88
DOIs	https://doi.org/10.1016/0168-583X(94)95320-1
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

Keywords

ion implantation, silicon-germanium

Access to Document

10.1016/0168-583X(94)95320-1

Cite this

Xia, Z., Saarilahti, J., Ronkainen, H., Eränen, S., Suni, I., Molarius, J., Kuivalainen, P., Ristolainen, E., & Tuomi, T. (1994). Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 88, 247-254. https://doi.org/10.1016/0168-583X(94)95320-1

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title = "Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation",

keywords = "ion implantation, silicon-germanium, ion implantation, silicon-germanium, ion implantation, silicon-germanium",

author = "Z. Xia and Jaakko Saarilahti and H. Ronkainen and S. Er{\"a}nen and I. Suni and J. Molarius and P. Kuivalainen and E. Ristolainen and T. Tuomi",

year = "1994",

doi = "10.1016/0168-583X(94)95320-1",

language = "English",

volume = "88",

pages = "247--254",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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Xia, Z, Saarilahti, J, Ronkainen, H, Eränen, S, Suni, I, Molarius, J, Kuivalainen, P, Ristolainen, E & Tuomi, T 1994, 'Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 88, pp. 247-254. https://doi.org/10.1016/0168-583X(94)95320-1

TY - JOUR

T1 - Rapid thermal annealing of Si1-xGex layers formed by germanium ion implantation

AU - Xia, Z.

AU - Saarilahti, Jaakko

AU - Ronkainen, H.

AU - Eränen, S.

AU - Suni, I.

AU - Molarius, J.

AU - Kuivalainen, P.

AU - Ristolainen, E.

AU - Tuomi, T.

PY - 1994

Y1 - 1994

KW - ion implantation, silicon-germanium

U2 - 10.1016/0168-583X(94)95320-1

DO - 10.1016/0168-583X(94)95320-1

M3 - Article

SN - 0168-583X

VL - 88

SP - 247

EP - 254

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -