Rapid Thermal Annealing of Si(1-x)Ge(x) Layers Formed by Germanium Ion Implantation

Z. Xia, J. Saarilahti, H. Ronkainen, S. Eränen, I. Suni, J. Molarius, P. Kuivalainen, E. Ristolainen, T. Tuomi

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)247-254
    JournalNuclear Instruments and Methods
    Issue numberB 88
    Publication statusPublished - 1994
    MoE publication typeA1 Journal article-refereed

    Keywords

    • ion implantation
    • rapid thermal annealing
    • SiGe layer
    • SIMS

    Cite this