@article{39aae8bdc1ff4dc28f3c4e530ceb61a3,
title = "Rapid Thermal Annealing of Si(1-x)Ge(x) Layers Formed by Germanium Ion Implantation",
keywords = "ion implantation, rapid thermal annealing, SiGe layer, SIMS, ion implantation, rapid thermal annealing, SiGe layer, SIMS, ion implantation, rapid thermal annealing, SiGe layer, SIMS",
author = "Z. Xia and J. Saarilahti and H. Ronkainen and S. Er{\"a}nen and I. Suni and J. Molarius and P. Kuivalainen and E. Ristolainen and T. Tuomi",
year = "1994",
language = "English",
pages = "247--254",
journal = "Nuclear Instruments and Methods",
number = "B 88",
}