Rapid Thermal Annealing of Si(1-x)Ge(x) Layers Formed by Germanium Ion Implantation

Z. Xia; J. Saarilahti; H. Ronkainen; S. Eränen; I. Suni; J. Molarius; P. Kuivalainen; E. Ristolainen; T. Tuomi

Rapid Thermal Annealing of Si(1-x)Ge(x) Layers Formed by Germanium Ion Implantation

Z. Xia, J. Saarilahti, H. Ronkainen, S. Eränen, I. Suni, J. Molarius, P. Kuivalainen, E. Ristolainen, T. Tuomi

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (Scopus)

Original language	English
Pages (from-to)	247-254
Journal	Nuclear Instruments and Methods
Issue number	B 88
Publication status	Published - 1994
MoE publication type	A1 Journal article-refereed

Keywords

ion implantation
rapid thermal annealing
SiGe layer
SIMS

Cite this

@article{39aae8bdc1ff4dc28f3c4e530ceb61a3,

title = "Rapid Thermal Annealing of Si(1-x)Ge(x) Layers Formed by Germanium Ion Implantation",

keywords = "ion implantation, rapid thermal annealing, SiGe layer, SIMS, ion implantation, rapid thermal annealing, SiGe layer, SIMS, ion implantation, rapid thermal annealing, SiGe layer, SIMS",

author = "Z. Xia and J. Saarilahti and H. Ronkainen and S. Er{\"a}nen and I. Suni and J. Molarius and P. Kuivalainen and E. Ristolainen and T. Tuomi",

year = "1994",

language = "English",

pages = "247--254",

journal = "Nuclear Instruments and Methods",

number = "B 88",

}

TY - JOUR

T1 - Rapid Thermal Annealing of Si(1-x)Ge(x) Layers Formed by Germanium Ion Implantation

AU - Xia, Z.

AU - Saarilahti, J.

AU - Ronkainen, H.

AU - Eränen, S.

AU - Suni, I.

AU - Molarius, J.

AU - Kuivalainen, P.

AU - Ristolainen, E.

AU - Tuomi, T.

PY - 1994

Y1 - 1994

KW - ion implantation

KW - rapid thermal annealing

KW - SiGe layer

KW - SIMS

KW - ion implantation

KW - rapid thermal annealing

KW - SiGe layer

KW - SIMS

KW - ion implantation

KW - rapid thermal annealing

KW - SiGe layer

KW - SIMS

M3 - Article

SP - 247

EP - 254

JO - Nuclear Instruments and Methods

JF - Nuclear Instruments and Methods

IS - B 88

ER -