Random deposition as a growth mode in atomic layer deposition

Riikka L. Puurunen*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

52 Citations (Scopus)

Abstract

Despite the increasing number of successful applications of material growth by atomic layer deposition (ALD), the description of many physicochemical processes that occur during ALD growth is still incomplete. The way the material is arranged on the surface during ALD growth, called the ALD growth mode, defines important material properties, such as when the substrate gets fully covered by the ALD-grown material, and the surface roughness. This work initiates the theoretical description of ALD growth modes by describing the random deposition growth mode, both qualitatively and quantitatively, by using the growth per cycle as a statistical quantity.

Original languageEnglish
Pages (from-to)159-170
Number of pages12
JournalChemical Vapor Deposition
Volume10
Issue number3
DOIs
Publication statusPublished - Jun 2004
MoE publication typeA1 Journal article-refereed

Keywords

  • ALD
  • Growth per cycle
  • Model
  • Random deposition

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