Raman Scattering from Very Thin Si Layers of Si/SiO2 Superlattices: Experimental Evidence of Structural Modification in the 0.8-3.5 nm Thickness Region

L. Kriachtchev, Markku Räsänen, S. Novikov, O. Kilpelä, J. Sinkkonen

Research output: Contribution to journalArticleScientificpeer-review

58 Citations (Scopus)
Original languageEnglish
Pages (from-to)5601
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed


  • Raman Scattering
  • Silicon
  • Superlattices

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