Raman fingerprints and exciton-phonon coupling in 2D ternary layered semiconductor InSeBr

Xuerong Hu, Luojun Du*, Yadong Wang, Jouko Lahtinen, Lide Yao, Zhaoyu Ren, Zhipei Sun

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Compared to other two-dimensional (2D) crystals with single or binary elements, 2D ternary layered materials have unique physical properties for potential applications due to the stoichiometric variation and synergistic effect. Here, we report the first investigation of lattice dynamics and interactions between the exciton and lattice degrees of freedom in a 2D ternary semiconductor: indium-selenide-bromide (InSeBr). Via linear polarization resolved Raman scattering measurements, we uncover three Raman modes in few-layer InSeBr, including two A(1g) and one E-g modes. Moreover, through the combination of temperature-dependent Raman scattering experiments and theoretical calculations, we elucidate that few-layer InSeBr would harbor strong coupling between excitons and phonons. Our results may provide a firm basis for the development and engineering of potential optoelectronic devices based on 2D ternary semiconductors. Published under license by AIP Publishing.

Original languageEnglish
Article number163105
Number of pages5
JournalApplied Physics Letters
Volume116
Issue number16
DOIs
Publication statusPublished - 20 Apr 2020
MoE publication typeA1 Journal article-refereed

Keywords

  • HIGH-ELECTRON-MOBILITY
  • VALLEY POLARIZATION
  • MONOLAYER
  • SCATTERING
  • MOS2

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