Radiation-induced alloy rearrangement in InxGa1− xN

Research output: Contribution to journalArticleScientificpeer-review


Research units

  • CSIC
  • Otto von Guericke University Magdeburg
  • University of the Basque Country


The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.


Original languageEnglish
Article number132104
Pages (from-to)1-4
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 27 Mar 2017
MoE publication typeA1 Journal article-refereed

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