Radiation-induced alloy rearrangement in InxGa1− xN
Research output: Contribution to journal › Article › Scientific › peer-review
- Otto von Guericke University Magdeburg
- University of the Basque Country
The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.
|Journal||Applied Physics Letters|
|Publication status||Published - 27 Mar 2017|
|MoE publication type||A1 Journal article-refereed|