Radiation-induced alloy rearrangement in InxGa1− xN

V. Prozheeva; I. Makkonen; R. Cuscó; L. Artús; A. Dadgar; F. Plazaola; F. Tuomisto

doi:10.1063/1.4979410

Radiation-induced alloy rearrangement in In_xGa₁₋ _xN

V. Prozheeva, I. Makkonen, R. Cuscó, L. Artús, A. Dadgar, F. Plazaola, F. Tuomisto

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The effect of radiation damage on the defect and alloy structure in In_xGa₁₋ _xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He⁺ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>10¹⁸ cm⁻³) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.

Original language	English
Article number	132104
Pages (from-to)	1-4
Journal	Applied Physics Letters
Volume	110
Issue number	13
DOIs	https://doi.org/10.1063/1.4979410
Publication status	Published - 27 Mar 2017
MoE publication type	A1 Journal article-refereed

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@article{3dcfe518522d4e0da1f7b14804d4b4e8,

title = "Radiation-induced alloy rearrangement in InxGa1− xN",

abstract = "The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.",

author = "V. Prozheeva and I. Makkonen and R. Cusc{\'o} and L. Art{\'u}s and A. Dadgar and F. Plazaola and F. Tuomisto",

year = "2017",

month = mar,

day = "27",

doi = "10.1063/1.4979410",

language = "English",

volume = "110",

pages = "1--4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Radiation-induced alloy rearrangement in InxGa1− xN

AU - Prozheeva, V.

AU - Makkonen, I.

AU - Cuscó, R.

AU - Artús, L.

AU - Dadgar, A.

AU - Plazaola, F.

AU - Tuomisto, F.

PY - 2017/3/27

Y1 - 2017/3/27

N2 - The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.

AB - The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation.

UR - http://www.scopus.com/inward/record.url?scp=85016490030&partnerID=8YFLogxK

U2 - 10.1063/1.4979410

DO - 10.1063/1.4979410

M3 - Article

AN - SCOPUS:85016490030

SN - 0003-6951

VL - 110

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132104

ER -

Radiation-induced alloy rearrangement in In_xGa₁₋ _xN

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Large-scale electronic structure techniques for advanced materials characterization

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Radiation-induced alloy rearrangement in In_xGa₁₋ _xN