Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

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Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons. / Tuominen, E.; Härkönen, J.; Tuovinen, E.; Lassila-Perini, K.; Luukka, P.; Mehtälä, P.; Nummela, S.; Nysten, J.; Zibellini, A.; Li, Z.; Heikkilä, P.; Ovchinnikov, V.; Yli-Koski, M.; Laitinen, P.; Pirojenko, A.; Riihimäki, I.; Virtanen, A.

In: IEEE Transactions on Nuclear Science, Vol. 50, No. 6 Part 1, 2003, p. 1942-1946.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Tuominen, E, Härkönen, J, Tuovinen, E, Lassila-Perini, K, Luukka, P, Mehtälä, P, Nummela, S, Nysten, J, Zibellini, A, Li, Z, Heikkilä, P, Ovchinnikov, V, Yli-Koski, M, Laitinen, P, Pirojenko, A, Riihimäki, I & Virtanen, A 2003, 'Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons' IEEE Transactions on Nuclear Science, vol. 50, no. 6 Part 1, pp. 1942-1946.

APA

Tuominen, E., Härkönen, J., Tuovinen, E., Lassila-Perini, K., Luukka, P., Mehtälä, P., ... Virtanen, A. (2003). Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons. IEEE Transactions on Nuclear Science, 50(6 Part 1), 1942-1946.

Vancouver

Tuominen E, Härkönen J, Tuovinen E, Lassila-Perini K, Luukka P, Mehtälä P et al. Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons. IEEE Transactions on Nuclear Science. 2003;50(6 Part 1):1942-1946.

Author

Tuominen, E. ; Härkönen, J. ; Tuovinen, E. ; Lassila-Perini, K. ; Luukka, P. ; Mehtälä, P. ; Nummela, S. ; Nysten, J. ; Zibellini, A. ; Li, Z. ; Heikkilä, P. ; Ovchinnikov, V. ; Yli-Koski, M. ; Laitinen, P. ; Pirojenko, A. ; Riihimäki, I. ; Virtanen, A. / Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons. In: IEEE Transactions on Nuclear Science. 2003 ; Vol. 50, No. 6 Part 1. pp. 1942-1946.

Bibtex - Download

@article{7a64da1b37f1410d8ab9c4a5f92a26d2,
title = "Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons",
author = "E. Tuominen and J. H{\"a}rk{\"o}nen and E. Tuovinen and K. Lassila-Perini and P. Luukka and P. Meht{\"a}l{\"a} and S. Nummela and J. Nysten and A. Zibellini and Z. Li and P. Heikkil{\"a} and V. Ovchinnikov and M. Yli-Koski and P. Laitinen and A. Pirojenko and I. Riihim{\"a}ki and A. Virtanen",
year = "2003",
language = "English",
volume = "50",
pages = "1942--1946",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers",
number = "6 Part 1",

}

RIS - Download

TY - JOUR

T1 - Radiation hardness of Czochralski silicon studied by 10-MeV and 20-MeV protons

AU - Tuominen, E.

AU - Härkönen, J.

AU - Tuovinen, E.

AU - Lassila-Perini, K.

AU - Luukka, P.

AU - Mehtälä, P.

AU - Nummela, S.

AU - Nysten, J.

AU - Zibellini, A.

AU - Li, Z.

AU - Heikkilä, P.

AU - Ovchinnikov, V.

AU - Yli-Koski, M.

AU - Laitinen, P.

AU - Pirojenko, A.

AU - Riihimäki, I.

AU - Virtanen, A.

PY - 2003

Y1 - 2003

M3 - Article

VL - 50

SP - 1942

EP - 1946

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6 Part 1

ER -

ID: 4153884