Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

Research output: Contribution to journalArticle


  • S. Nummela
  • J. Nysten
  • A. Zibellini
  • Z. Li
  • E. Fretwurst
  • G. Lindström
  • J. Stahl
  • F. Honniger
  • V. Eremin
  • A. Ivanov
  • E. Verbitskaya
  • P. Heikkilä
  • Victor Ovchinnikov

  • Marko Yli-Koski

  • P. Laitinen
  • A. Pirojenko
  • I. Riihimäki
  • A. Virtanen

Research units


Original languageEnglish
Pages (from-to)346-348
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-2
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

ID: 4153909