Quantum memristors with superconducting circuits

J. Salmilehto, F. Deppe, M. Di Ventra, M. Sanz, E. Solano*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

21 Citations (Scopus)
180 Downloads (Pure)

Abstract

Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.

Original languageEnglish
Article number42044
Pages (from-to)1-6
JournalScientific Reports
Volume7
DOIs
Publication statusPublished - 14 Feb 2017
MoE publication typeA1 Journal article-refereed

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