Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V Lotkhov; Antti Kemppinen; Sergey Kafanov; Jukka P. Pekola; A.B. Zorin

doi:10.1063/1.3227839

Pumping properties of the hybrid single-electron transistor in dissipative environment

S.V Lotkhov, Antti Kemppinen, Sergey Kafanov, Jukka P. Pekola, A.B. Zorin

Department of Applied Physics

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Abstract

Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

Original language	English
Article number	112507
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3227839
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

Keywords

resistors
single electron transistors
superconducting materials
tunneling

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10.1063/1.3227839

1%2E3227839Final published version, 330 KB

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abstract = "Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.",

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AU - Lotkhov, S.V

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AU - Pekola, Jukka P.

AU - Zorin, A.B.

PY - 2009

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AB - Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.

KW - resistors

KW - single electron transistors

KW - superconducting materials

KW - tunneling

KW - resistors

KW - single electron transistors

KW - superconducting materials

KW - tunneling

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KW - superconducting materials

KW - tunneling

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JO - Applied Physics Letters

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Pumping properties of the hybrid single-electron transistor in dissipative environment

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Keywords

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