Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating.
- single electron transistors
- superconducting materials
Lotkhov, S. V., Kemppinen, A., Kafanov, S., Pekola, J. P., & Zorin, A. B. (2009). Pumping properties of the hybrid single-electron transistor in dissipative environment. Applied Physics Letters, 95(11), 1-3. . https://doi.org/10.1063/1.3227839