Projects per year
Abstract
The protection of halide perovskites is important for the performance and stability of emergent perovskite-based optoelectronic technologies. In this work, we investigate the potential inorganic protective coating materials ZnO, SrZrO3, and ZrO2 for the CsPbI3 perovskite. The optimal interface registries are identified with Bayesian optimization. We then use semilocal density functional theory (DFT) to determine the atomic structure at the interfaces of each coating material with the clean CsI-terminated surface and three reconstructed surface models with added PbI2 and CsI complexes. For the final structures, we explore the level alignment at the interface with hybrid DFT calculations. Our analysis of the level alignment at the coating-substrate interfaces reveals no detrimental mid-gap states but rather substrate-dependent valence and conduction band offsets. While ZnO and SrZrO3 act as insulators on CsPbI3, ZrO2 might be suitable as an electron transport layer with the right interface engineering.
Original language | English |
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Pages (from-to) | 12758-12765 |
Journal | ACS Applied Materials and Interfaces |
Volume | 14 |
Issue number | 10 |
DOIs | |
Publication status | Published - 16 Mar 2022 |
MoE publication type | A1 Journal article-refereed |
Keywords
- Bayesian optimization
- coating
- density functional theory
- interface
- level alignment
- perovskite
- surface
- transport layer
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Dive into the research topics of 'Protective Coating Interfaces for Perovskite Solar Cell Materials: A First-Principles Study'. Together they form a unique fingerprint.Projects
- 2 Finished
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Dynamical configuration interaction - Dynaaminen konfiguraatiovuorovaikutus
Dvorak, M. (Principal investigator)
01/09/2018 → 31/08/2021
Project: Academy of Finland: Other research funding
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Database driven science for new materials
Rinke, P. (Principal investigator), Li, J. (Project Member), Dvorak, M. (Project Member) & Geurts, A. (Project Member)
01/10/2016 → 30/09/2018
Project: Academy of Finland: Other research funding