Protective capping and surface passivation of III-V nanowires by atomic layer deposition

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Protective capping and surface passivation of III-V nanowires by atomic layer deposition. / Dhaka, Veer; Perros, Alexander; Naureen, Shagufta; Shahid, Naeem; Jiang, Hua; Kakko, Joona-Pekko; Haggren, Tuomas; Kauppinen, Esko; Srinivasan, Anand; Lipsanen, Harri.

In: AIP ADVANCES, Vol. 6, No. 1, 015016, 01.01.2016, p. 1-7.

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Dhaka, Veer ; Perros, Alexander ; Naureen, Shagufta ; Shahid, Naeem ; Jiang, Hua ; Kakko, Joona-Pekko ; Haggren, Tuomas ; Kauppinen, Esko ; Srinivasan, Anand ; Lipsanen, Harri. / Protective capping and surface passivation of III-V nanowires by atomic layer deposition. In: AIP ADVANCES. 2016 ; Vol. 6, No. 1. pp. 1-7.

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@article{c411ed4f753541f59f16c5521e2fa077,
title = "Protective capping and surface passivation of III-V nanowires by atomic layer deposition",
abstract = "Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2{\AA}) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.",
author = "Veer Dhaka and Alexander Perros and Shagufta Naureen and Naeem Shahid and Hua Jiang and Joona-Pekko Kakko and Tuomas Haggren and Esko Kauppinen and Anand Srinivasan and Harri Lipsanen",
year = "2016",
month = "1",
day = "1",
doi = "10.1063/1.4941063",
language = "English",
volume = "6",
pages = "1--7",
journal = "AIP ADVANCES",
issn = "2158-3226",
number = "1",

}

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TY - JOUR

T1 - Protective capping and surface passivation of III-V nanowires by atomic layer deposition

AU - Dhaka, Veer

AU - Perros, Alexander

AU - Naureen, Shagufta

AU - Shahid, Naeem

AU - Jiang, Hua

AU - Kakko, Joona-Pekko

AU - Haggren, Tuomas

AU - Kauppinen, Esko

AU - Srinivasan, Anand

AU - Lipsanen, Harri

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

AB - Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

UR - http://www.scopus.com/inward/record.url?scp=84956702878&partnerID=8YFLogxK

U2 - 10.1063/1.4941063

DO - 10.1063/1.4941063

M3 - Article

VL - 6

SP - 1

EP - 7

JO - AIP ADVANCES

JF - AIP ADVANCES

SN - 2158-3226

IS - 1

M1 - 015016

ER -

ID: 1536043