Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

Y.-C. Lin, D.O. Dumcenco, H.-P. Komsa, Y. Niimi, A.V. Krasheninnikov, Y.-S. Huang, K. Suenaga

Research output: Contribution to journal › Article › Scientific › peer-review

196 Citations (Scopus)

Keywords

@article{5ac62700fa4e418c9723d2e106062ea7,

title = "Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity",

keywords = "doping, MoS2, doping, MoS2, doping, MoS2",

author = "Y.-C. Lin and D.O. Dumcenco and H.-P. Komsa and Y. Niimi and A.V. Krasheninnikov and Y.-S. Huang and K. Suenaga",

year = "2014",

language = "English",

volume = "26",

pages = "2857--2861",

journal = "Advanced Materials",

issn = "0935-9648",

}

TY - JOUR

T1 - Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

AU - Lin, Y.-C.

AU - Dumcenco, D.O.

AU - Komsa, H.-P.

AU - Niimi, Y.

AU - Krasheninnikov, A.V.

AU - Huang, Y.-S.

AU - Suenaga, K.

PY - 2014

Y1 - 2014

KW - doping

KW - MoS2

KW - doping

KW - MoS2

KW - doping

KW - MoS2

UR - http://onlinelibrary.wiley.com/doi/10.1002/adma.201304985/abstract

M3 - Article

VL - 26

SP - 2857

EP - 2861

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

ER -