Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy

M. Sopanen, T. Koljonen, T. Tuomi

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	34-37
Publication status	Published - 1993
MoE publication type	D4 Published development or research report or study

Name	Optoelectronics Laboratory, Helsinki University of Technology
No.	TKK-F-C148

Keywords

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title = "Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy",

keywords = "semiconductor lasers, semiconductor lasers, semiconductor lasers",

author = "M. Sopanen and T. Koljonen and T. Tuomi",

year = "1993",

language = "English",

series = "Optoelectronics Laboratory, Helsinki University of Technology",

number = "TKK-F-C148",

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T1 - Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy

AU - Sopanen, M.

AU - Koljonen, T.

AU - Tuomi, T.

PY - 1993

Y1 - 1993

KW - semiconductor lasers

M3 - Working paper

T3 - Optoelectronics Laboratory, Helsinki University of Technology

SP - 34

EP - 37

BT - Properties and processing of InGaAsP/InP lasers fabricated with liquid phase epitaxy

CY - Espoo

ER -