Programmable SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver

Ville Saari; Jussi Mustola; Jarkko Jussila; Jussi Ryynänen; Saska Lindfors; Kari Halonen

doi:10.1007/s10470-007-9088-y

Programmable SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver

Ville Saari^*, Jussi Mustola, Jarkko Jussila, Jussi Ryynänen, Saska Lindfors, Kari Halonen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver is described in this paper. The 4th-order Chebyshev filter with a 0.1-dB passband ripple is designed to drive a high-resolution A/D converter. The -3-dB frequency of the implemented filter can be programmed to four different bandwidths: 2.5, 5, 7.5, and 10 MHz depending on the number of received WCDMA channels. The filter achieves +9.7-dBV in-band IIP3, +20-dBV out-of-band IIP3, and 8.5-nV/vHz input-referred noise density with 10-MHz bandwidth. The circuit uses a 2.5 V supply and has been fabricated in a 0.25-μm SiGe BiCMOS process.

Original language	English
Pages (from-to)	77-84
Number of pages	8
Journal	Analog Integrated Circuits and Signal Processing
Volume	54
Issue number	2
DOIs	https://doi.org/10.1007/s10470-007-9088-y
Publication status	Published - Feb 2008
MoE publication type	A1 Journal article-refereed

Keywords

BiCMOS
Integrated circuits
Low-pass filter
Multicarrier system
Receiver
SiGe

Access to Document

10.1007/s10470-007-9088-y

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Cite this

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title = "Programmable SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver",

abstract = "SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver is described in this paper. The 4th-order Chebyshev filter with a 0.1-dB passband ripple is designed to drive a high-resolution A/D converter. The -3-dB frequency of the implemented filter can be programmed to four different bandwidths: 2.5, 5, 7.5, and 10 MHz depending on the number of received WCDMA channels. The filter achieves +9.7-dBV in-band IIP3, +20-dBV out-of-band IIP3, and 8.5-nV/vHz input-referred noise density with 10-MHz bandwidth. The circuit uses a 2.5 V supply and has been fabricated in a 0.25-μm SiGe BiCMOS process.",

keywords = "BiCMOS, Integrated circuits, Low-pass filter, Multicarrier system, Receiver, SiGe",

author = "Ville Saari and Jussi Mustola and Jarkko Jussila and Jussi Ryyn{\"a}nen and Saska Lindfors and Kari Halonen",

year = "2008",

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AU - Saari, Ville

AU - Mustola, Jussi

AU - Jussila, Jarkko

AU - Ryynänen, Jussi

AU - Lindfors, Saska

AU - Halonen, Kari

PY - 2008/2

Y1 - 2008/2

N2 - SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver is described in this paper. The 4th-order Chebyshev filter with a 0.1-dB passband ripple is designed to drive a high-resolution A/D converter. The -3-dB frequency of the implemented filter can be programmed to four different bandwidths: 2.5, 5, 7.5, and 10 MHz depending on the number of received WCDMA channels. The filter achieves +9.7-dBV in-band IIP3, +20-dBV out-of-band IIP3, and 8.5-nV/vHz input-referred noise density with 10-MHz bandwidth. The circuit uses a 2.5 V supply and has been fabricated in a 0.25-μm SiGe BiCMOS process.

AB - SiGe BiCMOS low-pass filter for a multicarrier WCDMA base-station receiver is described in this paper. The 4th-order Chebyshev filter with a 0.1-dB passband ripple is designed to drive a high-resolution A/D converter. The -3-dB frequency of the implemented filter can be programmed to four different bandwidths: 2.5, 5, 7.5, and 10 MHz depending on the number of received WCDMA channels. The filter achieves +9.7-dBV in-band IIP3, +20-dBV out-of-band IIP3, and 8.5-nV/vHz input-referred noise density with 10-MHz bandwidth. The circuit uses a 2.5 V supply and has been fabricated in a 0.25-μm SiGe BiCMOS process.

KW - BiCMOS

KW - Integrated circuits

KW - Low-pass filter

KW - Multicarrier system

KW - Receiver

KW - SiGe

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