Printed WORM Memory on a Flexible Substrate Based on Rapid Electrical Sintering of Nanoparticles

Jaakko Leppäniemi; Mikko Aronniemi; Tomi Mattila; Ari Alastalo; Mark Allen; Heikki Seppä

doi:10.1109/TED.2010.2088402

Printed WORM Memory on a Flexible Substrate Based on Rapid Electrical Sintering of Nanoparticles

Jaakko Leppäniemi, Mikko Aronniemi, Tomi Mattila, Ari Alastalo, Mark Allen, Heikki Seppä

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

26 Citations (Scopus)

Abstract

Fully printed low-voltage programmable resistive write-once-read-many (WORM) memory on a flexible substrate is investigated. The memory concept is demonstrated using inkjet-printed silver nanoparticle structures on a photopaper. The initial high-resistance state "0" is written into the low-resistance state "1" using rapid electrical sintering. A key advantage is low writing power and energy. The long-term stability of the initial nonsintered state is found to require special attention to obtain a sufficient shelf storage time. The memory design offers potential for high-throughput roll-to-roll production.

Original language	English
Pages (from-to)	151-159
Number of pages	9
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	1
DOIs	https://doi.org/10.1109/TED.2010.2088402
Publication status	Published - Jan 2011
MoE publication type	A1 Journal article-refereed

Keywords

Electrical sintering
low-voltage programmable memory
nanoparticles
printed memory
write-once memory
DEVICES
FILMS

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10.1109/TED.2010.2088402

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@article{965eeb04645e401b803e79400c78f4f4,

title = "Printed WORM Memory on a Flexible Substrate Based on Rapid Electrical Sintering of Nanoparticles",

abstract = "Fully printed low-voltage programmable resistive write-once-read-many (WORM) memory on a flexible substrate is investigated. The memory concept is demonstrated using inkjet-printed silver nanoparticle structures on a photopaper. The initial high-resistance state {"}0{"} is written into the low-resistance state {"}1{"} using rapid electrical sintering. A key advantage is low writing power and energy. The long-term stability of the initial nonsintered state is found to require special attention to obtain a sufficient shelf storage time. The memory design offers potential for high-throughput roll-to-roll production.",

keywords = "Electrical sintering, low-voltage programmable memory, nanoparticles, printed memory, write-once memory, DEVICES, FILMS",

author = "Jaakko Lepp{\"a}niemi and Mikko Aronniemi and Tomi Mattila and Ari Alastalo and Mark Allen and Heikki Sepp{\"a}",

year = "2011",

month = jan,

doi = "10.1109/TED.2010.2088402",

language = "English",

volume = "58",

pages = "151--159",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "1",

}

TY - JOUR

T1 - Printed WORM Memory on a Flexible Substrate Based on Rapid Electrical Sintering of Nanoparticles

AU - Leppäniemi, Jaakko

AU - Aronniemi, Mikko

AU - Mattila, Tomi

AU - Alastalo, Ari

AU - Allen, Mark

AU - Seppä, Heikki

PY - 2011/1

Y1 - 2011/1

N2 - Fully printed low-voltage programmable resistive write-once-read-many (WORM) memory on a flexible substrate is investigated. The memory concept is demonstrated using inkjet-printed silver nanoparticle structures on a photopaper. The initial high-resistance state "0" is written into the low-resistance state "1" using rapid electrical sintering. A key advantage is low writing power and energy. The long-term stability of the initial nonsintered state is found to require special attention to obtain a sufficient shelf storage time. The memory design offers potential for high-throughput roll-to-roll production.

AB - Fully printed low-voltage programmable resistive write-once-read-many (WORM) memory on a flexible substrate is investigated. The memory concept is demonstrated using inkjet-printed silver nanoparticle structures on a photopaper. The initial high-resistance state "0" is written into the low-resistance state "1" using rapid electrical sintering. A key advantage is low writing power and energy. The long-term stability of the initial nonsintered state is found to require special attention to obtain a sufficient shelf storage time. The memory design offers potential for high-throughput roll-to-roll production.

KW - Electrical sintering

KW - low-voltage programmable memory

KW - nanoparticles

KW - printed memory

KW - write-once memory

KW - DEVICES

KW - FILMS

U2 - 10.1109/TED.2010.2088402

DO - 10.1109/TED.2010.2088402

M3 - Article

SN - 0018-9383

VL - 58

SP - 151

EP - 159

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Printed WORM Memory on a Flexible Substrate Based on Rapid Electrical Sintering of Nanoparticles

Abstract

Keywords

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