Pressure-mediated contact quality improvement between monolayer MoS                         
                        2
                                                  and graphite

Mengzhou Liao; Luojun Du; Tingting Zhang; Lin Gu; Yugui Yao; Rong Yang; Dongxia Shi; Guangyu Zhang

doi:10.1088/1674-1056/28/1/017301

Pressure-mediated contact quality improvement between monolayer MoS ₂ and graphite

Mengzhou Liao
, Luojun Du
, Tingting Zhang
, Lin Gu
, Yugui Yao
, Rong Yang
, Dongxia Shi^*
, Guangyu Zhang

^*Corresponding author for this work

CAS - Institute of Physics
University of Chinese Academy of Sciences
Beijing Institute of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

Abstract

Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS ₂ as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS ₂ devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS ₂ and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS ₂ is significantly improved. This pressure-mediated contact quality improvement between MoS ₂ and graphite comes from the enhanced charge transfer between MoS ₂ and graphite when MoS ₂ is stretched. Our results provide a new way to enhance the contact quality between MoS ₂ and graphite for further applications.

Original language	English
Article number	017301
Number of pages	5
Journal	Chinese Physics B
Volume	28
Issue number	1
DOIs	https://doi.org/10.1088/1674-1056/28/1/017301
Publication status	Published - 1 Jan 2019
MoE publication type	A1 Journal article-refereed

Funding

Project supported by the National Key R&D Program, China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant Nos. XDPB06 and XDB07010100), and the National Natural Science Foundation of China (Grant Nos. 61734001 and 51572289).

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

C-AFM
Contact quality
MoS /graphite heterojunction
Pressure

Access to Document

10.1088/1674-1056/28/1/017301

Cite this

@article{22b832be498d4b1b93d8490e65be8a2f,

title = "Pressure-mediated contact quality improvement between monolayer MoS 2 and graphite",

abstract = " Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS 2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS 2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS 2 and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS 2 is significantly improved. This pressure-mediated contact quality improvement between MoS 2 and graphite comes from the enhanced charge transfer between MoS 2 and graphite when MoS 2 is stretched. Our results provide a new way to enhance the contact quality between MoS 2 and graphite for further applications. ",

keywords = "C-AFM, Contact quality, MoS /graphite heterojunction, Pressure",

author = "Mengzhou Liao and Luojun Du and Tingting Zhang and Lin Gu and Yugui Yao and Rong Yang and Dongxia Shi and Guangyu Zhang",

year = "2019",

month = jan,

day = "1",

doi = "10.1088/1674-1056/28/1/017301",

language = "English",

volume = "28",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "Institute of Physics Publishing",

number = "1",

}

Pressure-mediated contact quality improvement between monolayer MoS ₂ and graphite. / Liao, Mengzhou; Du, Luojun; Zhang, Tingting et al.
In: Chinese Physics B, Vol. 28, No. 1, 017301, 01.01.2019.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Pressure-mediated contact quality improvement between monolayer MoS 2 and graphite

AU - Liao, Mengzhou

AU - Du, Luojun

AU - Zhang, Tingting

AU - Gu, Lin

AU - Yao, Yugui

AU - Yang, Rong

AU - Shi, Dongxia

AU - Zhang, Guangyu

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS 2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS 2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS 2 and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS 2 is significantly improved. This pressure-mediated contact quality improvement between MoS 2 and graphite comes from the enhanced charge transfer between MoS 2 and graphite when MoS 2 is stretched. Our results provide a new way to enhance the contact quality between MoS 2 and graphite for further applications.

AB - Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS 2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS 2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS 2 and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS 2 is significantly improved. This pressure-mediated contact quality improvement between MoS 2 and graphite comes from the enhanced charge transfer between MoS 2 and graphite when MoS 2 is stretched. Our results provide a new way to enhance the contact quality between MoS 2 and graphite for further applications.

KW - C-AFM

KW - Contact quality

KW - MoS /graphite heterojunction

KW - Pressure

UR - https://www.scopus.com/pages/publications/85062526214

U2 - 10.1088/1674-1056/28/1/017301

DO - 10.1088/1674-1056/28/1/017301

M3 - Article

AN - SCOPUS:85062526214

SN - 1674-1056

VL - 28

JO - Chinese Physics B

JF - Chinese Physics B

IS - 1

M1 - 017301

ER -