Precision measurements of quantum Hall resistance plateau in doping-controlled graphene device

Dong Hun Chae, Wan Seop Kim, Alexandre Satrapinski, Sergei Novikov

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Abstract

    We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from Rh (v = 2) less than 30 parts in 109 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.

    Original languageEnglish
    Title of host publicationCPEM 2016 - Conference on Precision Electromagnetic Measurements, Conference Digest
    PublisherIEEE
    Number of pages2
    ISBN (Electronic)9781467391344
    DOIs
    Publication statusPublished - 10 Aug 2016
    MoE publication typeA4 Article in a conference publication
    EventConference on Precision Electromagnetic Measurements - Ottawa, Canada
    Duration: 10 Jul 201615 Jul 2016

    Publication series

    NameConference on precision electromagnetic measurements
    PublisherIEEE
    ISSN (Electronic)2160-1485

    Conference

    ConferenceConference on Precision Electromagnetic Measurements
    Abbreviated titleCPEM
    CountryCanada
    CityOttawa
    Period10/07/201615/07/2016

    Keywords

    • cryogenic current comparator
    • Graphene
    • precision measurement
    • quantum Hall effect
    • resistance metrology

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