Precise control of the interlayer twist angle in large scale MoS2 homostructures

Mengzhou Liao, Zheng Wei, Luojun Du, Qinqin Wang, Jian Tang, Hua Yu, Fanfan Wu, Jiaojiao Zhao, Xiaozhi Xu, Bo Han, Kaihui Liu, Peng Gao, Tomas Polcar, Zhipei Sun, Dongxia Shi, Rong Yang*, Guangyu Zhang

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

31 Citations (Scopus)
39 Downloads (Pure)


Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.

Original languageEnglish
Article number2153
Number of pages8
JournalNature Communications
Issue number1
Publication statusPublished - 1 May 2020
MoE publication typeA1 Journal article-refereed


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