Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy

Kari T. Hjelt*, Markku A. Sopanen, Harri K. Lipsanen, Turkka O. Tuomi, Stanisla Hasenohrl

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    2 Citations (Scopus)

    Abstract

    Praseodymium dioxide doped layers are grown on semi-insulating InP substrates with liquid-phase epitaxy. The quaternary layer composition determined with two-crystal X ray diffraction and photoreflectance is found to be independent of the PrO2 concentration in the melt. The photoluminescence spectra measured at 12K show both exciton and donor-acceptor peaks, the magnitudes of which depend on the PrO2 doping. The carrier concentration of the n-type quaternary layer decreases and the mobility increases with increasing PrO2 concentration and reaches the values of 8.3·1015 cm-3 and 7300 cm2/Vs, respectively, at about 0.1 wt% at 77K. The experiments show that PrO2 has an impurity gettering effect in the growth process.

    Original languageEnglish
    Title of host publicationRARE EARTH DOPED SEMICONDUCTORS
    EditorsGernot S. Pomrenke, Paul B. Klein, Dietrich W. Langer
    PublisherMaterials Research Society MRS
    Pages27-32
    Number of pages6
    ISBN (Print)1558991972
    DOIs
    Publication statusPublished - 1 Jan 1993
    MoE publication typeA4 Article in a conference publication
    EventMaterials Research Society Spring Meeting - San Francisco, United States
    Duration: 13 Apr 199315 Apr 1993

    Publication series

    NameMRS Proceedings
    PublisherMRS
    Volume301
    ISSN (Print)0272-9172

    Conference

    ConferenceMaterials Research Society Spring Meeting
    CountryUnited States
    CitySan Francisco
    Period13/04/199315/04/1993

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