Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

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Original languageEnglish
Place of PublicationUSA
Pages27-32
Publication statusPublished - 1993
MoE publication typeD4 Published development or research report or study

Publication series

NameMaterials Research Society Symposium Proceedings
No.30

    Research areas

  • compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping

ID: 5203810