Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

K. Hjelt, M. Sopanen, H. Lipsanen, T. Tuomi

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationUSA
    Pages27-32
    Publication statusPublished - 1993
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameMaterials Research Society Symposium Proceedings
    No.30

    Keywords

    • compound semiconductors
    • liquid phase epitaxy (LPE)
    • praseodymium dioxide doping

    Cite this