Praseodymium dioxide doping of In1-xGaxAsyP1-y epilayer grown with liquid phase epitaxy

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Researchers

Research units

  • Slovak Academy of Sciences

Abstract

Praseodymium dioxide doped layers are grown on semi-insulating InP substrates with liquid-phase epitaxy. The quaternary layer composition determined with two-crystal X ray diffraction and photoreflectance is found to be independent of the PrO2 concentration in the melt. The photoluminescence spectra measured at 12K show both exciton and donor-acceptor peaks, the magnitudes of which depend on the PrO2 doping. The carrier concentration of the n-type quaternary layer decreases and the mobility increases with increasing PrO2 concentration and reaches the values of 8.3·1015 cm-3 and 7300 cm2/Vs, respectively, at about 0.1 wt% at 77K. The experiments show that PrO2 has an impurity gettering effect in the growth process.

Details

Original languageEnglish
Title of host publicationRARE EARTH DOPED SEMICONDUCTORS
EditorsGernot S. Pomrenke, Paul B. Klein, Dietrich W. Langer
Publication statusPublished - 1 Jan 1993
MoE publication typeA4 Article in a conference publication
EventMaterials Research Society Spring Meeting - San Francisco, United States
Duration: 13 Apr 199315 Apr 1993

Publication series

NameMRS Proceedings
PublisherMRS
Volume301
ISSN (Print)0272-9172

Conference

ConferenceMaterials Research Society Spring Meeting
CountryUnited States
CitySan Francisco
Period13/04/199315/04/1993

ID: 5545377