(poster) Temperature dependence of light-induced degradation in copper-contaminated silicon

Jeanette Lindroos; Yacine Boulfard; Marko Yli-Koski; Hele Savin

(poster) Temperature dependence of light-induced degradation in copper-contaminated silicon

Jeanette Lindroos, Yacine Boulfard, Marko Yli-Koski, Hele Savin

Electron Physics Group (EPG)

Research output: Contribution to conference › Abstract › Scientific › peer-review

Abstract

Copper is a common 3d transition metal impurity in silicon solar cells, which in its interstitial state causes light-induced degradation (LID) in crystalline silicon even without any boron or oxygen. Even though copper contamination increases the degradation rate, the activation energy in copper-contaminated silicon appears to be similar to the energy barrier required for boron-oxygen defect formation.

Original language	English
Publication status	Published - 2014
MoE publication type	Not Eligible
Event	European Photovoltaic Solar Energy Conference and Exhibition - Amsterdam, Netherlands Duration: 22 Sep 2014 → 26 Sep 2014 Conference number: 29

Conference

Conference	European Photovoltaic Solar Energy Conference and Exhibition
Country/Territory	Netherlands
City	Amsterdam
Period	22/09/2014 → 26/09/2014

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title = "(poster) Temperature dependence of light-induced degradation in copper-contaminated silicon",

abstract = "Copper is a common 3d transition metal impurity in silicon solar cells, which in its interstitial state causes light-induced degradation (LID) in crystalline silicon even without any boron or oxygen. Even though copper contamination increases the degradation rate, the activation energy in copper-contaminated silicon appears to be similar to the energy barrier required for boron-oxygen defect formation.",

author = "Jeanette Lindroos and Yacine Boulfard and Marko Yli-Koski and Hele Savin",

year = "2014",

language = "English",

note = "European Photovoltaic Solar Energy Conference and Exhibition ; Conference date: 22-09-2014 Through 26-09-2014",

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TY - CONF

T1 - (poster) Temperature dependence of light-induced degradation in copper-contaminated silicon

AU - Lindroos, Jeanette

AU - Boulfard, Yacine

AU - Yli-Koski, Marko

AU - Savin, Hele

N1 - Conference code: 29

PY - 2014

Y1 - 2014

N2 - Copper is a common 3d transition metal impurity in silicon solar cells, which in its interstitial state causes light-induced degradation (LID) in crystalline silicon even without any boron or oxygen. Even though copper contamination increases the degradation rate, the activation energy in copper-contaminated silicon appears to be similar to the energy barrier required for boron-oxygen defect formation.

AB - Copper is a common 3d transition metal impurity in silicon solar cells, which in its interstitial state causes light-induced degradation (LID) in crystalline silicon even without any boron or oxygen. Even though copper contamination increases the degradation rate, the activation energy in copper-contaminated silicon appears to be similar to the energy barrier required for boron-oxygen defect formation.

M3 - Abstract

T2 - European Photovoltaic Solar Energy Conference and Exhibition

Y2 - 22 September 2014 through 26 September 2014

ER -

(poster) Temperature dependence of light-induced degradation in copper-contaminated silicon

Abstract

Conference

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