(poster) Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency

H. Väinölä*, Peng Zhang, A. Haarahiltunen, A. A. Istratov, E. R. Weber

*Corresponding author for this work

Research output: Contribution to conferenceAbstractScientificpeer-review

Original languageEnglish
Publication statusPublished - 2003
MoE publication typeNot Eligible
EventConference on Gettering and Defect Engineering in Semiconductor Technology - Brandenburg, Germany
Duration: 21 Sept 200326 Sept 2003
Conference number: 10

Conference

ConferenceConference on Gettering and Defect Engineering in Semiconductor Technology
Country/TerritoryGermany
CityBrandenburg
Period21/09/200326/09/2003

Keywords

  • Cz-Silicon
  • Dissolution
  • Gettering
  • Iron
  • Oxygen Precipitates
  • Rapid Thermal Processing

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