(poster) Silicon surface passivation with atomic layer deposited aluminum nitride

Päivikki Repo, Yameng Bao, Heli Seppänen, Perttu Sippola, Hele Savin

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 2015
MoE publication type	Not Eligible
Event	International Conference on Defects in Semiconductors - Espoo, Finland Duration: 27 Jul 2015 → 31 Jul 2015 Conference number: 28

Conference	International Conference on Defects in Semiconductors
Abbreviated title	ICDS
Country/Territory	Finland
City	Espoo
Period	27/07/2015 → 31/07/2015

Keywords

@conference{2850275bd48745f3a4847c41593724ec,

title = "(poster) Silicon surface passivation with atomic layer deposited aluminum nitride",

keywords = "aluminum nitride, atomic layer deposition, surface passivation",

author = "P{\"a}ivikki Repo and Yameng Bao and Heli Sepp{\"a}nen and Perttu Sippola and Hele Savin",

year = "2015",

language = "English",

note = "International Conference on Defects in Semiconductors, ICDS ; Conference date: 27-07-2015 Through 31-07-2015",

}

TY - CONF

T1 - (poster) Silicon surface passivation with atomic layer deposited aluminum nitride

AU - Repo, Päivikki

AU - Bao, Yameng

AU - Seppänen, Heli

AU - Sippola, Perttu

AU - Savin, Hele

N1 - Conference code: 28

PY - 2015

Y1 - 2015

KW - aluminum nitride

KW - atomic layer deposition

KW - surface passivation

M3 - Abstract

T2 - International Conference on Defects in Semiconductors

Y2 - 27 July 2015 through 31 July 2015

ER -