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(poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original languageEnglish
Publication statusPublished - 2022
MoE publication typeNot Eligible
EventConference on Gettering and Defect Engineering in Semiconductor Technology - Mondsee, Austria
Duration: 11 Sept 2022 → 17 Sept 2022

Conference

ConferenceConference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated titleGADEST
Country/TerritoryAustria
CityMondsee
Period11/09/2022 → 17/09/2022

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