(poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers

Joonas Isometsä; John Fung; Toni Pasanen; Hanchen Liu; Oskari Leiviskä; Marko Yli-Koski; Ville Vähänissi; Hele Savin

(poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers

Joonas Isometsä^*, John Fung, Toni Pasanen, Hanchen Liu, Oskari Leiviskä, Marko Yli-Koski, Ville Vähänissi, Hele Savin

^*Corresponding author for this work

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 2022
MoE publication type	Not Eligible
Event	Conference on Gettering and Defect Engineering in Semiconductor Technology - Mondsee, Austria Duration: 11 Sept 2022 → 17 Sept 2022

Conference

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated title	GADEST
Country/Territory	Austria
City	Mondsee
Period	11/09/2022 → 17/09/2022

1 Active
5 Finished

COLO: Elimination of contact losses in semiconductors through atomic-scale interface research and engineering
Savin, H. (Principal investigator)
01/09/2021 → 31/08/2025
Project: RCF Academy Project
HYGER: Highly efficient IR detection unit based on high-purity black germanium technology
Savin, H. (Principal investigator)
01/05/2022 → 31/05/2024
Project: EU H2020 Framework program
Superior infrared sensors
Savin, H. (Principal investigator) & Pasanen, T. (Project Member)
29/01/2021 → 28/01/2023
Project: Domestic funds and foundations

Cite this

@conference{49a77765dd36473bb77ba6df86f94f77,

title = "(poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers",

author = "Joonas Isomets{\"a} and John Fung and Toni Pasanen and Hanchen Liu and Oskari Leivisk{\"a} and Marko Yli-Koski and Ville V{\"a}h{\"a}nissi and Hele Savin",

note = "Avaa abstrakti, kun julkaistu.; Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST ; Conference date: 11-09-2022 Through 17-09-2022",

year = "2022",

language = "English",

}

TY - CONF

T1 - (poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers

AU - Isometsä, Joonas

AU - Fung, John

AU - Pasanen, Toni

AU - Liu, Hanchen

AU - Leiviskä, Oskari

AU - Yli-Koski, Marko

AU - Vähänissi, Ville

AU - Savin, Hele

N1 - Avaa abstrakti, kun julkaistu.

PY - 2022

Y1 - 2022

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 11 September 2022 through 17 September 2022

ER -

(poster) Reduction of defect density at Ge/Al2O3 interface using GeO2 interfacial layers

Conference

Projects

COLO: Elimination of contact losses in semiconductors through atomic-scale interface research and engineering

HYGER: Highly efficient IR detection unit based on high-purity black germanium technology

Superior infrared sensors

Cite this