(poster) Recombination activity of Cu-LID defects in silicon: modeling and applications for high-resolution Cu imaging

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 2017
MoE publication type	Not Eligible
Event	Conference on Gettering and Defect Engineering in Semiconductor Technology - Lopota resort, Georgia, Telavi, Georgia Duration: 1 Oct 2017 → 6 Oct 2017 Conference number: 17

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated title	GADEST
Country/Territory	Georgia
City	Telavi
Period	01/10/2017 → 06/10/2017

Cite this

@conference{c064220c8b29459f97bbb953c541c615,

title = "(poster) Recombination activity of Cu-LID defects in silicon: modeling and applications for high-resolution Cu imaging",

author = "Alessandro Inglese and Henri Vahlman and Jonas Sch{\"o}n and Wolfram Kwapil and Hele Savin",

year = "2017",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST ; Conference date: 01-10-2017 Through 06-10-2017",

}

(poster) Recombination activity of Cu-LID defects in silicon: modeling and applications for high-resolution Cu imaging. / Inglese, Alessandro; Vahlman, Henri; Schön, Jonas et al.
2017. Abstract from Conference on Gettering and Defect Engineering in Semiconductor Technology, Telavi, Georgia.

Research output: Contribution to conference › Abstract › Scientific › peer-review

TY - CONF

T1 - (poster) Recombination activity of Cu-LID defects in silicon: modeling and applications for high-resolution Cu imaging

AU - Inglese, Alessandro

AU - Vahlman, Henri

AU - Schön, Jonas

AU - Kwapil, Wolfram

AU - Savin, Hele

N1 - Conference code: 17

PY - 2017

Y1 - 2017

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 1 October 2017 through 6 October 2017

ER -