(poster) Measurement of copper in p-type silicon using charge-carrier lifetime methods

Marko Yli-Koski, Hele Savin, Eero Saarnilehto, Antti Haarahiltunen, Juha Sinkkonen, G. Berenyi, Tibor Pavelka

Research output: Contribution to conferenceAbstractScientificpeer-review

Original languageEnglish
Publication statusPublished - 2005
MoE publication typeNot Eligible
EventConference on Gettering and Defect Engineering in Semiconductor Technology - La Badine, France
Duration: 25 Sep 200530 Sep 2005
Conference number: 11

Conference

ConferenceConference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated titleGADEST
Country/TerritoryFrance
CityLa Badine
Period25/09/200530/09/2005

Keywords

  • copper
  • PCD
  • silicon
  • SPV

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