(poster) Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

Nabil Khelifati; Hannu S. Laine; Ville Vähänissi; Hele Savin; Fatima Zohra Bouamama; Djoudi Bouhafs

(poster) Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

Nabil Khelifati, Hannu S. Laine, Ville Vähänissi, Hele Savin, Fatima Zohra Bouamama, Djoudi Bouhafs

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 2019
MoE publication type	Not Eligible
Event	Conference on Gettering and Defect Engineering in Semiconductor Technology - Seehotel Zeuthen, Zeuthen, Germany Duration: 22 Sep 2019 → 27 Sep 2019 Conference number: 18 https://www.gadest2019.org/index.php

Conference

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Abbreviated title	GADEST
Country/Territory	Germany
City	Zeuthen
Period	22/09/2019 → 27/09/2019
Internet address	https://www.gadest2019.org/index.php

Keywords

dissociation-association
gettering
iron-boron pairs
phosphorus implantation
silicon

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Anna Rissanen (Manager)
Aalto University
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Päivikki Repo (Manager)
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title = "(poster) Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering",

keywords = "dissociation-association, gettering, iron-boron pairs, phosphorus implantation, silicon",

author = "Nabil Khelifati and Laine, {Hannu S.} and Ville V{\"a}h{\"a}nissi and Hele Savin and Bouamama, {Fatima Zohra} and Djoudi Bouhafs",

year = "2019",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology , GADEST ; Conference date: 22-09-2019 Through 27-09-2019",

url = "https://www.gadest2019.org/index.php",

}

(poster) Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering. / Khelifati, Nabil; Laine, Hannu S.; Vähänissi, Ville et al.

2019. Abstract from Conference on Gettering and Defect Engineering in Semiconductor Technology , Zeuthen, Germany.

Research output: Contribution to conference › Abstract › Scientific › peer-review

TY - CONF

T1 - (poster) Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

AU - Khelifati, Nabil

AU - Laine, Hannu S.

AU - Vähänissi, Ville

AU - Savin, Hele

AU - Bouamama, Fatima Zohra

AU - Bouhafs, Djoudi

N1 - Conference code: 18

PY - 2019

Y1 - 2019

KW - dissociation-association

KW - gettering

KW - iron-boron pairs

KW - phosphorus implantation

KW - silicon

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 22 September 2019 through 27 September 2019

ER -

(poster) Dissociation and Formation Kinetics of Iron-Boron Pairs in Silicon after Phosphorus Implantation Gettering

Conference

Keywords

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OtaNano

OtaNano - Nanofab

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