(poster) Dimethylaluminium chloride as Al source in atomic layer deposited Al2O3 for silicon surface passivation

Research output: Contribution to conference › Abstract › Scientific › peer-review

Original language	English
Publication status	Published - 2015
MoE publication type	Not Eligible
Event	International Conference on Defects in Semiconductors - Espoo, Finland Duration: 27 Jul 2015 → 31 Jul 2015 Conference number: 28

Conference	International Conference on Defects in Semiconductors
Abbreviated title	ICDS
Country/Territory	Finland
City	Espoo
Period	27/07/2015 → 31/07/2015

Cite this

@conference{510e906aa8ed48138b8d59879d2f5e19,

title = "(poster) Dimethylaluminium chloride as Al source in atomic layer deposited Al2O3 for silicon surface passivation",

author = "Yameng Bao and S. Li and Laitinen, \{Mikko I.\} and T. Sajavaara and Hele Savin",

year = "2015",

language = "English",

note = "International Conference on Defects in Semiconductors, ICDS ; Conference date: 27-07-2015 Through 31-07-2015",

}

TY - CONF

T1 - (poster) Dimethylaluminium chloride as Al source in atomic layer deposited Al2O3 for silicon surface passivation

AU - Bao, Yameng

AU - Li, S.

AU - Laitinen, Mikko I.

AU - Sajavaara, T.

AU - Savin, Hele

N1 - Conference code: 28

PY - 2015

Y1 - 2015

M3 - Abstract

T2 - International Conference on Defects in Semiconductors

Y2 - 27 July 2015 through 31 July 2015

ER -