(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

Xiaolong Liu; Kexun Chen; Behrad Radfar; Patrick Mc Kearney; Simon Paulus; Sören Schäfer; Michael Serué; Doris Mutschall; Vesa Koskinen; Toni Pasanen; Ville Vähänissi; Mikko Juntunen; Stefan Kontermann; Hele Savin

(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

Xiaolong Liu^*, Kexun Chen, Behrad Radfar, Patrick Mc Kearney, Simon Paulus, Sören Schäfer, Michael Serué, Doris Mutschall, Vesa Koskinen, Toni Pasanen, Ville Vähänissi, Mikko Juntunen, Stefan Kontermann, Hele Savin

^*Corresponding author for this work

Research output: Contribution to conference › Abstract › Scientific › peer-review

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Abstract

We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.

Original language	English
Publication status	Published - 1 Jun 2023
MoE publication type	Not Eligible
Event	Optics & Photonics Days - University of Eastern Finland (UEF), Joensuu, Finland Duration: 30 May 2023 → 1 Jun 2023 https://www.photonics.fi/opd2023/program/

Conference

Conference	Optics & Photonics Days
Abbreviated title	OPD
Country/Territory	Finland
City	Joensuu
Period	30/05/2023 → 01/06/2023
Internet address	https://www.photonics.fi/opd2023/program/

Access to Document

OPD2023.v4Other version, 499 KBLicence: CC BY

FemtoBlack: Femtosecond laser sulfur hyperdoped black silicon for infrared photonic applications
Savin, H. (Principal investigator), Yli-Koski, M. (Project Member), Liu, X. (Project Member), Setälä, O. (Project Member) & Radfar, B. (Project Member)
01/03/2020 → 28/02/2024
Project: Business Finland: Strategic centres for science, technology and innovation (SHOK)

OtaNano
Rissanen, A. (Manager)
Aalto University
Facility/equipment: Facility
OtaNano - Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Facility/equipment: Facility

Cite this

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title = "(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices",

abstract = "We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.",

author = "Xiaolong Liu and Kexun Chen and Behrad Radfar and {Mc Kearney}, Patrick and Simon Paulus and S{\"o}ren Sch{\"a}fer and Michael Seru{\'e} and Doris Mutschall and Vesa Koskinen and Toni Pasanen and Ville V{\"a}h{\"a}nissi and Mikko Juntunen and Stefan Kontermann and Hele Savin",

year = "2023",

month = jun,

day = "1",

language = "English",

note = "Optics & Photonics Days, OPD ; Conference date: 30-05-2023 Through 01-06-2023",

url = "https://www.photonics.fi/opd2023/program/",

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TY - CONF

T1 - (poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

AU - Liu, Xiaolong

AU - Chen, Kexun

AU - Radfar, Behrad

AU - Mc Kearney, Patrick

AU - Paulus, Simon

AU - Schäfer, Sören

AU - Serué, Michael

AU - Mutschall, Doris

AU - Koskinen, Vesa

AU - Pasanen, Toni

AU - Vähänissi, Ville

AU - Juntunen, Mikko

AU - Kontermann, Stefan

AU - Savin, Hele

PY - 2023/6/1

Y1 - 2023/6/1

N2 - We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.

AB - We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.

M3 - Abstract

T2 - Optics & Photonics Days

Y2 - 30 May 2023 through 1 June 2023

ER -

(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

Abstract

Conference

Access to Document

Fingerprint

Projects

FemtoBlack: Femtosecond laser sulfur hyperdoped black silicon for infrared photonic applications

Equipment

OtaNano

OtaNano - Nanofab

Cite this