(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

Xiaolong Liu*, Kexun Chen, Behrad Radfar, Patrick Mc Kearney, Simon Paulus, Sören Schäfer, Michael Serué, Doris Mutschall, Vesa Koskinen, Toni Pasanen, Ville Vähänissi, Mikko Juntunen, Stefan Kontermann, Hele Savin

*Corresponding author for this work

Research output: Contribution to conferencePosterScientificpeer-review


We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.
Original languageEnglish
Publication statusAccepted/In press - 2023
MoE publication typeNot Eligible
EventOptics & Photonics Days - University of Eastern Finland (UEF), Joensuu, Finland
Duration: 30 May 20231 Jun 2023


ConferenceOptics & Photonics Days
Abbreviated titleOPD
Internet address


Dive into the research topics of '(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices'. Together they form a unique fingerprint.

Cite this