(poster) Analysis of phosphorus diffusion and intrinsic gettering of iron in multicrystalline silicon

We have studied theoretically the optimum temperature for intrinsic gettering of iron by as-grown iron precipitates in multicrystalline silicon. Simulations were done with two different cooling rates during crystal growth and with and without the gettering effect of a solar cell emitter diffusion. In slowly cooled crystals and in rapidly cooled crystals with low initial iron contamination level where the iron precipitate density after PDG is low, gettering to the emitter is pronounced. Under conditions of high initial iron contamination level and high iron precipitate density caused by fast cooling, the intrinsic gettering dominates. Due to higher precipitate density the optimal gettering temperature is also lower than in the case of slowly cooled crystal.