Post-deposition relaxation of internal stress in sputter-grown HfN thin films bombarded with carbon ions

R. Nowak, F Yoshida, Y Miyagawa, S Miyagawa

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The exposure of HM thin films sputter-deposited on silicon-substrate to the irradiation with carbon ions of moderate energy (E = 100 and 150 keV) and different fluences resulted in a relaxation of compressive internal stresses (from -5 to -4 GPa). The stress-reduction has been confirmed by measurements of the substrate deflection and X-ray diffraction method. The structural changes induced in the ion modified HFN-film/silicon-substrate system were studied by means of Auger electron spectroscopy, electron microscopy and)X-ray diffraction. The relative softening of HFN after bombardment with an energy of 150 keV was found to be caused by amorphization of the silicon substrate right under the film, while the depth-sensing indentation results proved that in the case of nitride films modified with lower energy (100 keV) the amorphization does not occur. We ascribed the registered past-deposition stress-release to a transport of interstitial defects within thermal spikes induced by the applied ion-treatment. (C) 1999 Elsevier Science B.V. All lights reserved.

Original languageEnglish
Pages (from-to)232-237
Number of pages6
JournalNUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH SECTION B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume148
Issue number1-4
DOIs
Publication statusPublished - Jan 1999
MoE publication typeA1 Journal article-refereed
EventInternational Conference on Ion Beam Modification of Materials - Amsterdam, Netherlands
Duration: 31 Aug 19984 Sep 1998
Conference number: 11

Keywords

  • internal stress
  • ion bombardment
  • relaxation
  • thin films
  • sputter-deposition
  • REDUCTION

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