Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon

Katja Kuitunen, K. Saarinen, Filip Tuomisto

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)
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Abstract

We have measured positron lifetime and Doppler broadening in highly As-doped silicon containing thermally generated V−As3 defect complexes (vacancy is surrounded by three arsenic atoms). We observe positron detrapping from the V−As3 defect complex and determine the binding energy of 0.27eV of a positron to the complex. The results explain why 85% of the thermal vacancies formed in highly As-doped Si at temperatures over 700K are invisible to positron measurements at elevated temperatures.
Original languageEnglish
Article number045210
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B
Volume75
Issue number4
DOIs
Publication statusPublished - 2007
MoE publication typeA1 Journal article-refereed

Keywords

  • arsenic
  • positron trapping
  • silicon
  • vacancy

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