Positron states in Si and GaAs

M. J. Puska*, C. Corbel

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

107 Citations (Scopus)

Abstract

Positron states in perfect Si and GaAs lattices and at small vacancy-cluster-type defects in these semiconductors are calculated. The method is based on the superposition of free atoms and the solution of the resulting Schrödinger equation by a fully-three-dimensional numerical relaxational method. Positron lifetimes are calculated and compared with available experimental data. The main emphasis is put on the dependence of the positron lifetime on the size of the vacancy cluster and on the role of the lattice relaxation around vacancies.

Original languageEnglish
Pages (from-to)9874-9880
Number of pages7
JournalPhysical Review B
Volume38
Issue number14
DOIs
Publication statusPublished - 15 Nov 1988
MoE publication typeA1 Journal article-refereed

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