Positron experiments in -doped GaAs(Si) superlattices: Defect properties and positron diffusion

T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, M.J. Ashwin, R.C. Newman

Research output: Working paperProfessional

1 Citation (Scopus)
Original languageEnglish
Place of PublicationPortugal
Publication statusPublished - 1997
MoE publication typeD4 Published development or research report or study

Publication series

NameInternational Conference of Defects in Semiconductors, Aveiro,Portugal 21.-25.7.1997


  • positron annihilation

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