Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

J. Slotte; F. Tuomisto; J. Kujala; A. M. Holm; N. Segercrantz; S. Kilpeläinen; K. Kuitunen; E. Simoen; F. Gencarelli; R. Loo; Y. Shimura

doi:10.1149/06411.0241ecst

Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

J. Slotte, F. Tuomisto, J. Kujala, A. M. Holm, N. Segercrantz, S. Kilpeläinen, K. Kuitunen, E. Simoen, F. Gencarelli, R. Loo, Y. Shimura

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

In this review of recent results from the positron group at Aalto university, we show how positron annihilation spectroscopy (PAS) can be used for identifying and studying the stability of open volume defects in different Si, Ge and SiGe structures. Some preliminary new results on GeSn are also presented. We show how the electronic states of the E center in SiGe have been determined as well as how thermal stability of this defect can be studied with PAS. In Ge we identify the monovacancy and the divacancy and study their thermal stability. PAS can also be used for studying interface states and this is utilized on Si nanoparticles embedded in SiO₂.

Original language	English
Title of host publication	ECS Transactions
Publisher	Electrochemical Society
Pages	241-253
Number of pages	13
Volume	64
Edition	11
DOIs	https://doi.org/10.1149/06411.0241ecst
Publication status	Published - 2014
MoE publication type	A4 Conference publication
Event	High Purity and High Mobility Semiconductor Symposium - Cancun, Mexico Duration: 5 Oct 2014 → 9 Oct 2014 Conference number: 13

Conference

Conference	High Purity and High Mobility Semiconductor Symposium
Country/Territory	Mexico
City	Cancun
Period	05/10/2014 → 09/10/2014

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10.1149/06411.0241ecst

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@inproceedings{90e82d0a25794928865f5bdf458116e2,

title = "Positron annihilation spectroscopy on open-volume defects in group IV semiconductors",

abstract = "In this review of recent results from the positron group at Aalto university, we show how positron annihilation spectroscopy (PAS) can be used for identifying and studying the stability of open volume defects in different Si, Ge and SiGe structures. Some preliminary new results on GeSn are also presented. We show how the electronic states of the E center in SiGe have been determined as well as how thermal stability of this defect can be studied with PAS. In Ge we identify the monovacancy and the divacancy and study their thermal stability. PAS can also be used for studying interface states and this is utilized on Si nanoparticles embedded in SiO2.",

author = "J. Slotte and F. Tuomisto and J. Kujala and Holm, {A. M.} and N. Segercrantz and S. Kilpel{\"a}inen and K. Kuitunen and E. Simoen and F. Gencarelli and R. Loo and Y. Shimura",

year = "2014",

doi = "10.1149/06411.0241ecst",

language = "English",

volume = "64",

pages = "241--253",

booktitle = "ECS Transactions",

publisher = "Electrochemical Society",

address = "United States",

edition = "11",

note = "High Purity and High Mobility Semiconductor Symposium ; Conference date: 05-10-2014 Through 09-10-2014",

}

Slotte, J, Tuomisto, F, Kujala, J, Holm, AM, Segercrantz, N, Kilpeläinen, S, Kuitunen, K, Simoen, E, Gencarelli, F, Loo, R & Shimura, Y 2014, Positron annihilation spectroscopy on open-volume defects in group IV semiconductors. in ECS Transactions. 11 edn, vol. 64, Electrochemical Society, pp. 241-253, High Purity and High Mobility Semiconductor Symposium, Cancun, Mexico, 05/10/2014. https://doi.org/10.1149/06411.0241ecst

TY - GEN

T1 - Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

AU - Slotte, J.

AU - Tuomisto, F.

AU - Kujala, J.

AU - Holm, A. M.

AU - Segercrantz, N.

AU - Kilpeläinen, S.

AU - Kuitunen, K.

AU - Simoen, E.

AU - Gencarelli, F.

AU - Loo, R.

AU - Shimura, Y.

N1 - Conference code: 13

PY - 2014

Y1 - 2014

N2 - In this review of recent results from the positron group at Aalto university, we show how positron annihilation spectroscopy (PAS) can be used for identifying and studying the stability of open volume defects in different Si, Ge and SiGe structures. Some preliminary new results on GeSn are also presented. We show how the electronic states of the E center in SiGe have been determined as well as how thermal stability of this defect can be studied with PAS. In Ge we identify the monovacancy and the divacancy and study their thermal stability. PAS can also be used for studying interface states and this is utilized on Si nanoparticles embedded in SiO2.

AB - In this review of recent results from the positron group at Aalto university, we show how positron annihilation spectroscopy (PAS) can be used for identifying and studying the stability of open volume defects in different Si, Ge and SiGe structures. Some preliminary new results on GeSn are also presented. We show how the electronic states of the E center in SiGe have been determined as well as how thermal stability of this defect can be studied with PAS. In Ge we identify the monovacancy and the divacancy and study their thermal stability. PAS can also be used for studying interface states and this is utilized on Si nanoparticles embedded in SiO2.

UR - http://www.scopus.com/inward/record.url?scp=84921313506&partnerID=8YFLogxK

U2 - 10.1149/06411.0241ecst

DO - 10.1149/06411.0241ecst

M3 - Conference article in proceedings

AN - SCOPUS:84921313506

VL - 64

SP - 241

EP - 253

BT - ECS Transactions

PB - Electrochemical Society

T2 - High Purity and High Mobility Semiconductor Symposium

Y2 - 5 October 2014 through 9 October 2014

ER -

Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

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