Positron annihilation spectroscopy on open-volume defects in group IV semiconductors

J. Slotte, F. Tuomisto, J. Kujala, A. M. Holm, N. Segercrantz, S. Kilpeläinen, K. Kuitunen, E. Simoen, F. Gencarelli, R. Loo, Y. Shimura

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

In this review of recent results from the positron group at Aalto university, we show how positron annihilation spectroscopy (PAS) can be used for identifying and studying the stability of open volume defects in different Si, Ge and SiGe structures. Some preliminary new results on GeSn are also presented. We show how the electronic states of the E center in SiGe have been determined as well as how thermal stability of this defect can be studied with PAS. In Ge we identify the monovacancy and the divacancy and study their thermal stability. PAS can also be used for studying interface states and this is utilized on Si nanoparticles embedded in SiO2.

Original languageEnglish
Title of host publicationECS Transactions
Pages241-253
Number of pages13
Volume64
Edition11
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
EventHigh Purity and High Mobility Semiconductor Symposium - Cancun, Mexico
Duration: 5 Oct 20149 Oct 2014
Conference number: 13

Conference

ConferenceHigh Purity and High Mobility Semiconductor Symposium
CountryMexico
CityCancun
Period05/10/201409/10/2014

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    Slotte, J., Tuomisto, F., Kujala, J., Holm, A. M., Segercrantz, N., Kilpeläinen, S., ... Shimura, Y. (2014). Positron annihilation spectroscopy on open-volume defects in group IV semiconductors. In ECS Transactions (11 ed., Vol. 64, pp. 241-253) https://doi.org/10.1149/06411.0241ecst